Thin Solid Films 1993, INCB018424 manufacturer 236:27–31.CrossRef 17. Lou XC, Zhao XJ, He X: Boron doping effects in electrochromic properties of NiO films prepared by sol–gel. Sol Energy 2009, 83:2103–2108.CrossRef 18. Steinebach H, Kannan S, Rieth L, Solzbacher F: H 2 gas sensor performance of NiO at high temperatures in gas mixtures. Sensors Actuators B-Chem 2010, 151:162–168.CrossRef
19. Adler D, Feinleib J: Electrical and optical properties of narrow-band materials. Phys Rev B-Solid State 1970, 2:3112–3134.CrossRef 20. Chung JL, Chen JC, Tseng CJ: Preparation of TiO 2 -doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen–argon gas. Appl Surf Sci 2008, 255:2494–2499.CrossRef 21. Kang JK, Rhee SW: Chemical vapor deposition of nickel oxide films from Ni(C 5 H 5 ) 2 /O 2 . Thin Solid Films 2001, 391:57–61.CrossRef 22. Zheng K, Gu L, Sun D, Mo XL, Chen G: The properties of ethanol
gas sensor based on Ti doped ZnO nanotetrapods. Mater Sci Eng B 2009, 166:104–107.CrossRef 23. Reguig BA, Khelil A, Cattin L, Morsli M, Bernède JC: Properties of NiO thin films deposited CHIR98014 by intermittent spray pyrolysis process. Appl Surf Sci 2007, 253:4330–4334.CrossRef 24. Pala RGS, Tang W, Sushchikh MM, Park JN, Forman AJ, Wu G, Kleiman-Shwarsctein A, Zhang J, McFarland EW, Metiu H: CO oxidation by Ti- and Al-doped ZnO: oxygen activation by adsorption on the SCH727965 molecular weight dopant. J Catal 2009, 266:50–58.CrossRef 25. Burstein E: Anomalous optical absorption limit in InSb. Phys Rev 1954, 93:632–633.CrossRef 26. Hamberg I, Granqvist CG,
Berggren KF, Sernelius BE, Engstrom L: Band-gap widening in heavily Sn-doped In 2 O 3 . Phys Rev B 1984, 30:3240–3249.CrossRef 27. Serpone N, Lawless D, Khairutdinov R: Size effects on the photophysical PLEKHB2 properties of colloidal anatase TiO 2 particles: size quantization versus direct transitions in this indirect semiconductor. J Phys Chem 1995, 99:16646–16654.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions C-C H carried out the experimental procedures, including the depositions of NiO and TZO thin films and measurements of SEM and X-ray patterns. F-H W gave the suggestion for the paper organization and English grammar correction. C-F Y participated in the design of the study, performed the statistical analysis, and organized the paper. C-C W and H-H H participated in the measurement and prediction of the I-V curve of NiO/TZO heterojunction diodes using the space-charge limited current (SCLC) theorem. All authors read and approved the final manuscript.”
“Background Silicon oxynitride (SiO x N y ) is a very useful material for applications in microelectronic and optoelectronic devices due to the possibility of tailoring the film composition and property according to the O/N ratio.